#define EXYNOS_FIRST_POINT_TRIM 25
#define EXYNOS_SECOND_POINT_TRIM 85
+#define EXYNOS_NOISE_CANCEL_MODE 4
+
#define MCELSIUS 1000
/**
* struct exynos_tmu_data : A structure to hold the private data of the TMU
con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
- if (pdata->noise_cancel_mode) {
- con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT);
- con |= (pdata->noise_cancel_mode << EXYNOS_TMU_TRIP_MODE_SHIFT);
- }
+ con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT);
+ con |= (EXYNOS_NOISE_CANCEL_MODE << EXYNOS_TMU_TRIP_MODE_SHIFT);
return con;
}
pdata->gain = (u8)value;
of_property_read_u32(np, "samsung,tmu_reference_voltage", &value);
pdata->reference_voltage = (u8)value;
- of_property_read_u32(np, "samsung,tmu_noise_cancel_mode", &value);
- pdata->noise_cancel_mode = (u8)value;
of_property_read_u32(np, "samsung,tmu_efuse_value",
&pdata->efuse_value);
* @reference_voltage: reference voltage of amplifier
* in the positive-TC generator block
* 0 < reference_voltage <= 31
- * @noise_cancel_mode: noise cancellation mode
- * 000, 100, 101, 110 and 111 can be different modes
* @efuse_value: platform defined fuse value
* @min_efuse_value: minimum valid trimming data
* @max_efuse_value: maximum valid trimming data
struct exynos_tmu_platform_data {
u8 gain;
u8 reference_voltage;
- u8 noise_cancel_mode;
u32 efuse_value;
u32 min_efuse_value;